Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

Part NumberSIHJ6N65E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V POWERPAK SO-8L

DatasheetSIHJ6N65E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ6N65E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ6N65E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ6N65E-T1-GE3.
We are offering SIHJ6N65E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ6N65E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ6N65E-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	868mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	596pF @ 100V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ6N65E-T1-GE3 - Related Products

	IRFR320TRPBF	Vishay Siliconix, N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	IRFIBE20GPBF	Vishay Siliconix, N-Channel 800V 1.4A (Tc) 30W (Tc) Through Hole TO-220-3,	View
	SIL08N03-TP	Micro Commercial Co, N-Channel 30V 8A (Tc) 1.6W Surface Mount SOT-23-6L,	View
	IRFIZ14GPBF	Vishay Siliconix, N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3,	View
	IRFS7734TRL7PP	Infineon Technologies, N-Channel 75V 197A (Tc) 294W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®, StrongIRFET™	View
	IPT012N08N5ATMA1	Infineon Technologies, N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™	View
	BUK9832-55A/CUX	Nexperia USA Inc., N-Channel 55V 12A (Tc) 8W (Tc) Surface Mount SC-73, TrenchMOS™	View
	STD26NF10	STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View
	STP33N60DM2	STMicroelectronics, N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ DM2	View
	PSMN7R8-100PSEQ	Nexperia USA Inc., N-Channel 100V 100A (Tj) 294W (Tc) Through Hole TO-220AB,	View
	NTMFS4955NT1G	ON Semiconductor, N-Channel 30V 9.7A (Ta), 48A (Tc) 920mW (Ta), 23.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	DMT6009LK3-13	Diodes Incorporated, N-Channel 60V 13.3A (Ta), 57A (Tc) 2.6W (Ta) Surface Mount TO-252,	View

SIHJ6N65E-T1-GE3 - Tags

SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 PDF SIHJ6N65E-T1-GE3 datasheet SIHJ6N65E-T1-GE3 specification SIHJ6N65E-T1-GE3 image SIHJ6N65E-T1-GE3 India Renesas Electronics India SIHJ6N65E-T1-GE3 buy SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 price SIHJ6N65E-T1-GE3 distributor SIHJ6N65E-T1-GE3 supplier SIHJ6N65E-T1-GE3 wholesales