Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

Part NumberSIHJ8N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V POWERPAK SO-8L

DatasheetSIHJ8N60E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ8N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ8N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ8N60E-T1-GE3.
We are offering SIHJ8N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ8N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ8N60E-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	754pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ8N60E-T1-GE3 - Related Products

	ZVN4306AV	Diodes Incorporated, N-Channel 60V 1.1A (Ta) 850mW (Ta) Through Hole TO-92-3,	View
	IRFP4229PBF	Infineon Technologies, N-Channel 250V 44A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®	View
	STL225N6F7AG	STMicroelectronics, N-Channel 60V 120A (Tc) 188W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
	DMN1008UFDF-13	Diodes Incorporated, N-Channel 12V 12.2A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type F), Automotive, AEC-Q101	View
	PSMN022-30PL,127	Nexperia USA Inc., N-Channel 30V 30A (Tc) 41W (Tc) Through Hole TO-220AB,	View
	FDP038AN06A0	ON Semiconductor, N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3, PowerTrench®	View
	SSM3K123TU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII	View
	NTP6412ANG	ON Semiconductor, N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220AB,	View
	DMN53D0LQ-7	Diodes Incorporated, N-Channel 50V 500mA (Ta) 370mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	IRFD110PBF	Vishay Siliconix, N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	NVMFS5C604NLWFAFT1G	ON Semiconductor, N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	APT18M100B	Microsemi Corporation, N-Channel 1000V 18A (Tc) 625W (Tc) Through Hole TO-247 [B],	View

SIHJ8N60E-T1-GE3 - Tags

SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 PDF SIHJ8N60E-T1-GE3 datasheet SIHJ8N60E-T1-GE3 specification SIHJ8N60E-T1-GE3 image SIHJ8N60E-T1-GE3 India Renesas Electronics India SIHJ8N60E-T1-GE3 buy SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 price SIHJ8N60E-T1-GE3 distributor SIHJ8N60E-T1-GE3 supplier SIHJ8N60E-T1-GE3 wholesales