SIHP15N60E-GE3
SIHP15N60E-GE3
Part Number SIHP15N60E-GE3
Description MOSFET N-CH 600V 15A TO220AB
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 15A (Tc) 180W (Tc) Through Hole TO-220AB
To learn about the specification of SIHP15N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHP15N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHP15N60E-GE3.
We are offering SIHP15N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHP15N60E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiHF15N60E
Standard Package 50
Manufacturer Vishay Siliconix
Series E
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 100V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
SIHP15N60E-GE3 - Related ProductsMore >>
IRFB4020PBF
Infineon Technologies, N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-220AB,
View
FDMC8622
ON Semiconductor, N-Channel 100V 4A (Ta), 16A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
View
IRFP260PBF
Vishay Siliconix, N-Channel 200V 46A (Tc) 280W (Tc) Through Hole TO-247-3,
View
IRL3803VPBF
Infineon Technologies, N-Channel 30V 140A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
LSIC1MO120E0080
Littelfuse Inc., N-Channel 1200V 39A (Tc) 179W (Tc) Through Hole TO-247-3,
View
IXTT40N50L2
IXYS, N-Channel 500V 40A (Tc) 540W (Tc) Surface Mount TO-268, Linear L2™
View
RSR010N10TL
Rohm Semiconductor, N-Channel 100V 1A (Ta) 540mW (Ta) Surface Mount TSMT3,
View
DN2540N3-G-P003
Microchip Technology, N-Channel 400V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226),
View
NCV8440ASTT1G
ON Semiconductor, N-Channel 59V 2.6A (Ta) 1.69W (Ta) Surface Mount SOT-223,
View
FCPF16N60NT
ON Semiconductor, N-Channel 600V 16A (Tc) 35.7W (Tc) Through Hole TO-220F, SupreMOS™
View
SIR690DP-T1-GE3
Vishay Siliconix, N-Channel 200V 34.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®
View
IRFB4615PBF
Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB, HEXFET®
View
SIHP15N60E-GE3 - Tags