Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR410DP-T1-GE3

SIR410DP-T1-GE3

SIR410DP-T1-GE3

Part NumberSIR410DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK SO-8

DatasheetSIR410DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR410DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR410DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR410DP-T1-GE3.
We are offering SIR410DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR410DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR410DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	4.2W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR410DP-T1-GE3 - Related Products

	IXFX300N20X3	IXYS, N-Channel 200V 300A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	PHP20N06T,127	Nexperia USA Inc., N-Channel 55V 20.3A (Tc) 62W (Tc) Through Hole TO-220AB, TrenchMOS™	View
	IRLHM630TRPBF	Infineon Technologies, N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3), HEXFET®	View
	FDT86246L	ON Semiconductor, N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-223-4, PowerTrench®	View
	IXTP200N055T2	IXYS, N-Channel 55V 200A (Tc) 360W (Tc) Through Hole TO-220AB, TrenchT2™	View
	IRL7833PBF	Infineon Technologies, N-Channel 30V 150A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDMC7660S	ON Semiconductor, N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33, PowerTrench®, SyncFET™	View
	STS1NK60Z	STMicroelectronics, N-Channel 600V 250mA (Tc) 2W (Tc) Surface Mount 8-SO, SuperMESH™	View
	TSM2308CX RFG	Taiwan Semiconductor Corporation, N-Channel 60V 3A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	NTTFS5C673NLTAG	ON Semiconductor, N-Channel 60V 13A (Ta), 50A (Tc) 3.1W (Ta), 46W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	TN5335K1-G	Microchip Technology, N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	DMN4060SVT-7	Diodes Incorporated, N-Channel 45V 4.8A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View

SIR410DP-T1-GE3 - Tags

SIR410DP-T1-GE3 SIR410DP-T1-GE3 PDF SIR410DP-T1-GE3 datasheet SIR410DP-T1-GE3 specification SIR410DP-T1-GE3 image SIR410DP-T1-GE3 India Renesas Electronics India SIR410DP-T1-GE3 buy SIR410DP-T1-GE3 SIR410DP-T1-GE3 price SIR410DP-T1-GE3 distributor SIR410DP-T1-GE3 supplier SIR410DP-T1-GE3 wholesales