Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS410DN-T1-GE3

SIS410DN-T1-GE3

SIS410DN-T1-GE3

Part NumberSIS410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK 1212-8

DatasheetSIS410DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS410DN-T1-GE3.
We are offering SIS410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS410DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS410DN-T1-GE3 - Related Products

	DN2470K4-G	Microchip Technology, N-Channel 700V 170mA (Tj) 2.5W (Ta) Surface Mount TO-252, (D-Pak),	View
	TPN1R603PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSIX-H	View
	AUIRF7669L2TR	Infineon Technologies, N-Channel 100V 19A (Ta), 114A (Tc) 3.3W (Ta), 100W (Tc) Surface Mount DIRECTFET L8, HEXFET®	View
	BSC16DN25NS3GATMA1	Infineon Technologies, N-Channel 250V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	STB16N90K5	STMicroelectronics, N-Channel 900V 15A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ K5	View
	IRF620STRRPBF	Vishay Siliconix, N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D2PAK,	View
	IRFIB5N65APBF	Vishay Siliconix, N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3,	View
	SI8812DB-T2-E1	Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	IRLR3410TRLPBF	Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®	View
	IXTX102N65X2	IXYS, N-Channel 650V 102A (Tc) 1040W (Tc) Through Hole PLUS247™-3,	View
	BUK7Y9R9-80EX	Nexperia USA Inc., N-Channel 80V 89A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	SIJA54DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SIS410DN-T1-GE3 - Tags

SIS410DN-T1-GE3 SIS410DN-T1-GE3 PDF SIS410DN-T1-GE3 datasheet SIS410DN-T1-GE3 specification SIS410DN-T1-GE3 image SIS410DN-T1-GE3 India Renesas Electronics India SIS410DN-T1-GE3 buy SIS410DN-T1-GE3 SIS410DN-T1-GE3 price SIS410DN-T1-GE3 distributor SIS410DN-T1-GE3 supplier SIS410DN-T1-GE3 wholesales