Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

Part NumberSQJQ402E-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 200A POWERPAK8

DatasheetSQJQ402E

Package / CasePowerPAK® 8 x 8 Single

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ402E-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ402E-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ402E-T1_GE3.
We are offering SQJQ402E-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ402E-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ402E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13500pF @ 20V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	PowerPAK® 8 x 8 Single

SQJQ402E-T1_GE3 - Related Products

	IRLZ44NPBF	Infineon Technologies, N-Channel 55V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-220AB, HEXFET®	View
	TSM4436CS RLG	Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View
	IXFN180N15P	IXYS, N-Channel 150V 150A (Tc) 680W (Tc) Chassis Mount SOT-227B, PolarHT™	View
	IXFQ30N60X	IXYS, N-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™	View
	STS26N3LLH6	STMicroelectronics, N-Channel 30V 26A (Tc) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ VI	View
	ZXMN10A25KTC	Diodes Incorporated, N-Channel 100V 4.2A (Ta) 2.11W (Ta) Surface Mount TO-252-3,	View
	SIR416DP-T1-GE3	Vishay Siliconix, N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI7658ADP-T1-GE3	Vishay Siliconix, N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRF840SPBF	Vishay Siliconix, N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	BUK9Y22-100E,115	Nexperia USA Inc., N-Channel 100V 49A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	DMTH6005LK3Q-13	Diodes Incorporated, N-Channel 60V 90A (Tc) 2.1W (Ta), 100W (Tc) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	CSD18509Q5B	Texas Instruments, N-Channel 40V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View

SQJQ402E-T1_GE3 - Tags

SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 PDF SQJQ402E-T1_GE3 datasheet SQJQ402E-T1_GE3 specification SQJQ402E-T1_GE3 image SQJQ402E-T1_GE3 India Renesas Electronics India SQJQ402E-T1_GE3 buy SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 price SQJQ402E-T1_GE3 distributor SQJQ402E-T1_GE3 supplier SQJQ402E-T1_GE3 wholesales