Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

Part NumberSQJQ402E-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 200A POWERPAK8

DatasheetSQJQ402E

Package / CasePowerPAK® 8 x 8 Single

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ402E-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ402E-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ402E-T1_GE3.
We are offering SQJQ402E-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ402E-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ402E
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13500pF @ 20V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	PowerPAK® 8 x 8 Single

SQJQ402E-T1_GE3 - Related Products

	SQJA96EP-T1_GE3	Vishay Siliconix, N-Channel 80V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	STH180N10F3-2	STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, STripFET™ III	View
	SI8410DB-T2-E1	Vishay Siliconix, N-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1), TrenchFET®	View
	STP105N3LL	STMicroelectronics, N-Channel 30V 80A (Tc) 140W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VI	View
	STI76NF75	STMicroelectronics, N-Channel 75V 80A (Tc) 300W (Tc) Through Hole I2PAK, STripFET™ II	View
	IRFB260NPBF	Infineon Technologies, N-Channel 200V 56A (Tc) 380W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDS86106	ON Semiconductor, N-Channel 100V 3.4A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	CSD18532NQ5BT	Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	NDT014	ON Semiconductor, N-Channel 60V 2.7A (Ta) 3W (Ta) Surface Mount SOT-223-4,	View
	STL13N60DM2	STMicroelectronics, N-Channel 600V 8A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ DM2	View
	IRF7815TRPBF	Infineon Technologies, N-Channel 150V 5.1A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	PSMN2R0-25MLDX	Nexperia USA Inc., N-Channel 25V 70A (Tc) 74W (Tc) Surface Mount LFPAK33,	View

SQJQ402E-T1_GE3 - Tags

SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 PDF SQJQ402E-T1_GE3 datasheet SQJQ402E-T1_GE3 specification SQJQ402E-T1_GE3 image SQJQ402E-T1_GE3 India Renesas Electronics India SQJQ402E-T1_GE3 buy SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 price SQJQ402E-T1_GE3 distributor SQJQ402E-T1_GE3 supplier SQJQ402E-T1_GE3 wholesales