Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGB10M65DF2
Standard Package	1
Manufacturer	STMicroelectronics
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	20A
Current - Collector Pulsed (Icm)	40A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 10A
Power - Max	115W
Switching Energy	120µJ (on), 270µJ (off)
Input Type	Standard
Gate Charge	28nC
Td (on/off) @ 25°C	19ns/91ns
Test Condition	400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr)	96ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

STGF20H60DF	STMicroelectronics, IGBT Trench Field Stop 600V 40A 37W Through Hole TO-220FP,	View
RGW60TS65GC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 60A 178W Through Hole TO-247N,	View
IKW50N60H3FKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 100A 333W Through Hole PG-TO247-3, TrenchStop®	View
STGWA40S120DF3	STMicroelectronics, IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3,	View
IXYH30N170C	IXYS, IGBT 1700V 108A 937W Through Hole TO-247AD, XPT™	View
IKA15N65H5XKSA1	Infineon Technologies, IGBT 650V 14A 33.3W Through Hole TO-220-3, TrenchStop®	View
IXBT20N360HV	IXYS, IGBT 3600V 70A 430W Surface Mount TO-268, BIMOSFET™	View
RGTVX6TS65GC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 144A 404W Through Hole TO-247N,	View
STGP30H60DFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Through Hole TO-220,	View
NGTB15N120FL2WG	ON Semiconductor, IGBT Trench Field Stop 1200V 30A 294W Through Hole TO-247-3,	View
STGW80H65DFB	STMicroelectronics, IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247,	View
APT45GP120B2DQ2G	Microsemi Corporation, IGBT PT 1200V 113A 625W Through Hole, POWER MOS 7®	View

STGB10M65DF2

Part NumberSTGB10M65DF2