TK10P60W,RVQ

Part NumberTK10P60W,RVQ

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK10P60W
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 300V
FET Feature	Super Junction
Power Dissipation (Max)	80W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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