TK14E65W,S1X
TK14E65W,S1X
Part Number TK14E65W,S1X
Description MOSFET N-CH 650V 13.7A TO-220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220
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TK14E65W,S1X - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK14E65W
Standard Package 50
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 300V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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