Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TSM60NB099PW C1G

TSM60NB099PW C1G

TSM60NB099PW C1G

Part NumberTSM60NB099PW C1G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CHANNEL 600V 38A TO247

DatasheetTSM60NB099PW

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-247

To learn about the specification of TSM60NB099PW C1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM60NB099PW C1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM60NB099PW C1G.
We are offering TSM60NB099PW C1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TSM60NB099PW C1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM60NB099PW
Standard Package	900
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2587pF @ 100V
FET Feature	-
Power Dissipation (Max)	329W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

TSM60NB099PW C1G - Related Products

	SIJA54DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	NTB5405NT4G	ON Semiconductor, N-Channel 40V 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	TK39N60W5,S1VF	Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV	View
	FDV301N	ON Semiconductor, N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	RCJ050N25TL	Rohm Semiconductor, N-Channel 250V 5A (Tc) 1.56W (Ta), 30W (Tc) Surface Mount LPTS (SC-83),	View
	IRFH5210TRPBF	Infineon Technologies, N-Channel 100V 10A (Ta), 55A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	IRLD024PBF	Vishay Siliconix, N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	SIR622DP-T1-RE3	Vishay Siliconix, N-Channel 150V 12.6A (Ta), 51.6A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	SSM6K361NU,LF	Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H	View
	SUD35N10-26P-GE3	Vishay Siliconix, N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IXTP50N25T	IXYS, N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-220AB,	View
	IRFS4010TRLPBF	Infineon Technologies, N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View

TSM60NB099PW C1G - Tags

TSM60NB099PW C1G TSM60NB099PW C1G PDF TSM60NB099PW C1G datasheet TSM60NB099PW C1G specification TSM60NB099PW C1G image TSM60NB099PW C1G India Renesas Electronics India TSM60NB099PW C1G buy TSM60NB099PW C1G TSM60NB099PW C1G price TSM60NB099PW C1G distributor TSM60NB099PW C1G supplier TSM60NB099PW C1G wholesales