TSM80N1R2CI C0G

Part NumberTSM80N1R2CI C0G

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM80N1R2CI
Standard Package	1000
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.4nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	685pF @ 100V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220AB
Package / Case	TO-220-3 Full Pack, Isolated Tab

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