Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S20P
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	16.5dB
Power - Max	1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
MMBTH11	ON Semiconductor, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFU725F/N1,115	NXP USA Inc., RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO,	View
BFS17NTA	Diodes Incorporated, RF Transistor NPN 11V 50mA 3.2GHz 330mW Surface Mount SOT-23-3,	View
2N918	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 600MHz 200mW Through Hole TO-72,	View
KST10MTF	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Surface Mount SOT-23-3,	View
PH1090-175L	M/A-Com Technology Solutions, RF Transistor NPN 80V 10.5A 188W Chassis Mount,	View
BFR106E6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 210mA 5GHz 700mW Surface Mount SOT-23-3,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFU520XAR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
BFU520XRR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View

MT3S20P(TE12L,F)

Part NumberMT3S20P(TE12L,F)