SIA445EDJT-T1-GE3
SIA445EDJT-T1-GE3
Part Number SIA445EDJT-T1-GE3 Description MOSFET P-CH 20V 12A SC70-6 Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIA445EDJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA445EDJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA445EDJT-T1-GE3.
We are offering SIA445EDJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA445EDJT-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA445EDJT Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 16.7mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 10V FET Feature - Power Dissipation (Max) 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
SIA445EDJT-T1-GE3 - Related ProductsMore >>
SIA429DJT-T1-GE3 Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
FDS4465 ON Semiconductor, P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SI3499DV-T1-GE3 Vishay Siliconix, P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP, TrenchFET®
View
DMP2045UFY4-7 Diodes Incorporated, P-Channel 20V 4.7A (Ta) 670mW (Ta) Surface Mount X2-DFN2015-3,
View
ZVP1320FTA Diodes Incorporated, P-Channel 200V 35mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,
View
IXTR170P10P IXYS, P-Channel 100V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™, PolarP™
View
SPB18P06PGATMA1 Infineon Technologies, P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount D²PAK (TO-263AB), SIPMOS®
View
NTLJF3117PT1G ON Semiconductor, P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2), µCool™
View
SI1401EDH-T1-GE3 Vishay Siliconix, P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
LP0701LG-G Microchip Technology, P-Channel 16.5V 700mA (Tj) 1.5W (Tc) Surface Mount 8-SOIC,
View
TSM2305CX RFG Taiwan Semiconductor Corporation, P-Channel 20V 3.2A (Ta) 1.25W (Ta) Surface Mount SOT-23,
View
DMP2045UFY4-7 Diodes Incorporated, P-Channel 20V 4.7A (Ta) 670mW (Ta) Surface Mount X2-DFN2015-3,
View
SIA445EDJT-T1-GE3 - Tags
English
