Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

Part NumberSIA445EDJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12A SC70-6

DatasheetSIA445EDJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA445EDJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA445EDJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA445EDJT-T1-GE3.
We are offering SIA445EDJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA445EDJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA445EDJT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	16.7mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 10V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA445EDJT-T1-GE3 - Related Products

	FDN304P	ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	SIR165DP-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen III	View
	PMN40ENEX	Nexperia USA Inc., N-Channel 30V 5.7A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP,	View
	SI7421DN-T1-E3	Vishay Siliconix, P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRF9640STRLPBF	Vishay Siliconix, P-Channel 200V 11A (Tc) 3W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	NTS2101PT1G	ON Semiconductor, P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	SUD50P10-43L-GE3	Vishay Siliconix, P-Channel 100V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252, TrenchFET®	View
	AOD4189	Alpha & Omega Semiconductor Inc., P-Channel 40V 40A (Tc) 2.5W (Ta), 62.5W (Tc) Surface Mount TO-252, (D-Pak),	View
	SSM3J133TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	PMZ950UPELYL	Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,	View
	NTS4173PT1G	ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	FDMS6681Z	ON Semiconductor, P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View

SIA445EDJT-T1-GE3 - Tags

SIA445EDJT-T1-GE3 SIA445EDJT-T1-GE3 PDF SIA445EDJT-T1-GE3 datasheet SIA445EDJT-T1-GE3 specification SIA445EDJT-T1-GE3 image SIA445EDJT-T1-GE3 India Renesas Electronics India SIA445EDJT-T1-GE3 buy SIA445EDJT-T1-GE3 SIA445EDJT-T1-GE3 price SIA445EDJT-T1-GE3 distributor SIA445EDJT-T1-GE3 supplier SIA445EDJT-T1-GE3 wholesales